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| PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES * * * * * HIGH fT: 16 GHz TYP at 2 V, 20 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE 0.65 2.0 0.2 1.3 2 1 NE699M01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 TOP VIEW 2.1 0.1 1.25 0.1 6 0.2 (All Leads) 5 T97 3 4 DESCRIPTION The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations. 0.9 0.1 0.7 0.15 - 0.05 0 ~ 0.1 +0.10 PIN CONNECTIONS 1. Emitter 4. Emitter 2. Emitter 5. Emitter 3. Base 6. Collector Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT CRE2 |S21E| NF 2 NE699M01 M01 UNITS A A 70 GHz pF dB dB 12 13 16 0.2 14 1.1 1.8 0.3 MIN TYP MAX 0.1 0.1 140 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain at VCE = 2 V, IC = 20 mA Gain Bandwidth Product at VCE = 2 V, IC = 20mA, f = 2.0GHz Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2.0 GHz Noise Figure at VCE = 2 V, IC = 3 mA, f = 2.0 GHz Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. California Eastern Laboratories NE699M01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 5 3 2 30 90 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE699M01-T1 QUANTITY 3000 PACKAGING Tape & Reel Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 2 V Total Power Dissipation, PT (mW) Free Air 80 Collector Current, Ic (mA) 150 40 90 mW 60 30 40 20 20 10 0 50 100 0 0.5 1.0 Ambient Temperature, TA (C) (V) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 DC CURRENT GAIN vs. COLLECTOR CURRENT 500 Collector Current, IC (mA) 20 15 10 5 200 A 200 A 180 A 180 A 160 A 160 A 140 A 140 A 120 A 100 A 100 A 80 A 80 A 60 A 60 A 40 A fs = 20 A 40 A IB = 20 A 200 DC Current Gain, hFE VCE = 2 V 100 50 VCE = 1 V 20 0 1.0 2.0 3.0 10 1 2 5 10 20 50 100 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) NE699M01 TYPICAL PERFORMANCE CURVES (TA = 25C) GAIN BANDWIDTH PRODUCT vs. Ic CHARACTERISTICS 20 18 INSERTION POWER GAIN vs. IC CHARACTERISTICS Insertion Power Gain, |S21E|2 (dB) 16 14 12 10 8 6 4 2 0 VCE = 2 V f = 2 GHz Gain Bandwidth Product, fT (GHz) VCE = 2 V f = 2 GHz 10 0 1 10 100 1 10 100 Collector Current, Ic (mA) Collector Current, Ic (mA) NOISE FIGURE vs. Ic CHARACTERISTICS 4 0.5 FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz Feedback Capacitance, CRE (pF) 100 VCE = 2 V f = 2 GHz Noise Figure, NF (dB) 3 0.4 0.3 2 0.2 1 0.1 0 1 10 0 1 10 100 Collector Current, Ic (mA) Collector to Base Voltage, VCB (V) INSERTION POWER GAIN vs. FREQUENCY CHARACTERISTICS 40 Insertion Power Gain, IS21E|2 (dB) VCE = 2 V 30 Ic = 20 mA 20 10 Ic = 3 mA 0 0.1 0.5 1.0 2.0 2.6 Frequency, f (GHz) NE699M01 TYPICAL NOISE PARAMETERS (TA = 25C) FREQ. (MHz) 0.50 1.00 1.50 2.00 2.50 3.00 4.00 5.00 NFOPT (dB) 1.25 1.35 1.46 1.55 1.70 1.86 2.30 2.75 GA (dB) 23.0 19.7 17.0 14.3 12.0 9.8 9.2 8.2 MAG 0.40 0.32 0.27 0.22 0.18 0.17 0.30 0.60 OPT ANG 27 50 70 93 130 160 -150 -111 Rn/50 0.25 0.34 0.22 0.21 0.17 0.12 0.08 0.28 VCE = 2 V, IC = 7 mA TYPICAL CONSTANT NOISE FIGURE 1 0.5 2 3 3 MINIMUM NOISE FIGURE vs. FREQUENCY Minimum Noise Figure, NFMIN (dB) FMIN dB 2.5 0.2 500 MHz 5 2 0 0.2 0.5 1.0 2.0 5.0 1.5 2 V, 7 mA 1 -0.2 -5 OPT 5 GHz -3 -0.5 -2 -1 0.5 2 V, 7 mA 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Frequency, f (GHz) NE699M01 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 S22 5 GHz j10 j100 90 135 S11 5 GHz S12 0.1 GHz 45 0 S11 0.1 GHz 0 S22 0.1 GHz 180 S21 0.1 GHz S21 5 GHz S12 0 5 GHz -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VCE = 2 V, IC = 5 mA 225 270 315 NE699M01 VCE = 2 V, IC = 1 mA FREQUENCY (GHz) 0.100 0.250 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 4.500 5.000 MAG 0.965 0.957 0.939 0.903 0.856 0.806 0.754 0.708 0.672 0.642 0.623 0.619 0.637 0.661 0.685 0.705 0.721 S11 ANG -5.8 -16.5 -26.7 -40.4 -54.6 -68.8 -83.5 -98.0 -111.7 -125.3 -137.6 -162.8 178.8 164.5 152.0 139.7 126.6 MAG 3.118 2.957 2.971 2.934 2.871 2.754 2.648 2.503 2.334 2.196 2.045 1.687 1.410 1.179 1.000 0.851 0.735 S21 ANG 169.3 164.0 155.1 143.5 132.0 120.8 109.7 99.4 89.6 80.6 71.9 53.0 37.3 23.6 11.8 1.7 -7.0 MAG 0.013 0.031 0.049 0.070 0.088 0.102 0.112 0.118 0.119 0.118 0.114 0.095 0.073 0.056 0.058 0.079 0.109 S12 ANG 82.4 76.7 69.3 59.7 50.0 40.9 32.3 24.3 17.0 10.6 5.1 -4.3 -5.0 9.0 34.6 49.5 52.3 MAG 0.990 0.985 0.972 0.947 0.917 0.881 0.844 0.809 0.778 0.752 0.732 0.706 0.708 0.728 0.753 0.780 0.804 S22 ANG -4.4 -10.5 -16.8 -24.9 -32.8 -40.3 -47.4 -54.0 -60.4 -66.6 -72.7 -87.7 -102.9 -117.2 -130.2 -141.1 -150.0 K MAG1 (dB) 23.8 19.8 17.8 16.2 15.1 14.3 13.7 13.3 12.9 12.7 12.6 12.5 10.4 8.8 8.0 7.9 8.3 0.17 0.10 0.13 0.17 0.22 0.27 0.33 0.38 0.45 0.51 0.59 0.83 1.17 1.58 1.55 1.16 0.89 VCE = 2 V, IC = 5 mA FREQUENCY (GHz) 0.100 2.500 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 0.450 5.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.844 0.467 0.735 0.634 0.546 0.482 0.442 0.422 0.416 0.419 0.429 0.467 0.503 0.534 0.560 0.716 0.602 ANG -11.8 162.3 -49.7 -72.3 -93.2 -112.5 -130.3 -146.3 -159.8 -171.6 179.0 162.3 151.4 142.8 134.8 -55.4 115.7 MAG 13.310 3.441 11.439 10.168 8.857 7.697 6.735 5.939 5.277 4.746 4.288 3.441 2.860 2.433 2.108 11.128 1.636 S21 ANG 166.4 50.7 140.3 124.9 112.0 101.2 91.9 83.9 76.8 70.2 64.2 50.7 38.7 27.7 17.3 136.4 -2.0 MAG 0.012 0.075 0.041 0.053 0.061 0.065 0.068 0.069 0.070 0.071 0.072 0.075 0.081 0.092 0.106 0.045 0.143 S12 ANG 79.5 33.4 60.0 49.9 42.4 37.2 33.7 31.6 30.4 30.2 30.6 33.4 37.6 41.2 43.1 57.4 41.5 MAG 0.955 0.423 0.847 0.751 0.665 0.596 0.541 0.501 0.471 0.450 0.436 0.423 0.435 0.465 0.503 0.826 0.588 S22 ANG -8.7 -100.4 -31.2 -42.8 -52.0 -59.3 -65.6 -71.3 -76.6 -81.9 -87.1 -100.4 -113.5 -125.3 -135.6 -34.4 -150.7 K MAG1 (dB) 30.4 26.4 24.5 22.8 21.7 20.7 20.0 19.3 18.8 18.3 16.5 14.0 12.5 11.5 10.9 10.9 10.6 0.21 0.19 0.25 0.35 0.45 0.56 0.66 0.77 0.87 0.96 1.04 1.19 1.24 1.21 1.12 1.02 0.91 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE699M01 TYPICAL SCATTERING PARAMETERS (TA = 25C) NE699M01 VCE = 2 V, IC = 7 mA FREQUENCY (GHz) 0.100 0.250 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 4.500 5.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.792 0.743 0.658 0.552 0.471 0.421 0.397 0.389 0.393 0.403 0.418 0.460 0.495 0.525 0.549 0.569 0.589 ANG -14.7 -37.2 -58.5 -83.5 -105.7 -125.7 -143.6 -158.8 -171.3 178.2 170.0 155.6 146.2 138.5 131.2 122.8 113.1 MAG 17.256 15.479 14.101 12.010 10.130 8.616 7.432 6.493 5.738 5.137 4.634 3.710 3.086 2.630 2.287 2.015 1.790 S21 ANG 164.9 149.9 135.4 119.6 107.1 97.0 88.4 81.0 74.5 68.4 62.8 50.2 38.9 28.4 18.3 8.7 -0.7 MAG 0.012 0.027 0.038 0.048 0.054 0.058 0.061 0.063 0.065 0.067 0.070 0.077 0.087 0.099 0.114 0.131 0.150 S12 ANG 78.8 67.6 57.9 48.8 43.0 39.5 37.5 36.7 36.5 37.0 37.6 40.2 42.5 43.9 44.0 42.8 40.5 MAG 0.939 0.882 0.794 0.683 0.593 0.525 0.476 0.440 0.415 0.397 0.386 0.378 0.393 0.423 0.462 0.505 0.549 S22 ANG -10.3 -24.0 -35.7 -47.5 -56.4 -63.4 -69.4 -74.9 -80.1 -85.5 -90.7 -104.1 -117.0 -128.4 -138.0 -145.7 -152.0 K MAG1 (dB) 31.6 27.6 25.7 24.0 22.8 21.7 20.9 20.1 19.5 17.6 16.3 14.2 12.8 11.8 11.2 11.4 10.8 0.23 0.23 0.31 0.43 0.55 0.67 0.77 0.87 0.96 1.04 1.10 1.19 1.21 1.17 1.09 1.01 0.92 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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